Publizierte Artikel

(1) Rapid dislocation-related D1 photoluminescence imaging of multicrystalline Si wafers at room temperature
R.P. Schmid, D. Mankovics, T. Arguirov, M. Ratzke, T. Mchedlidze, M. Kittler
Phys. Stat. Sol. (a) 208, 888 (2011)

(2) Novel imaging techniques for dislocation-related D1 photoluminescence of multicrystalline Si wafers – two different approaches
R. Schmid, D. Mankovics, T. Arguirov, T. Mchedlidze, M. Kittler
Phys. Stat. Sol. (c) 8, 1297 (2011)

(3) Correlating internal stresses, electrical activity and defect structure on the micrometer scale in EFG silicon ribbons
G. Sarau, S. Christiansen, M. Holla, W. Seifert
Solar Energy Materials & Solar Cells 95, 2264 (2011)

(4) Structural characterization of crystallized Si thin film material by HRTEM and Raman spectroscopy
T. Mchedlidze, M. Beigmohamadi, B. Berghoff, R. Sohal, S. Suckow, T. Arguirov, N. Wilck, J. Mayer, B. Spangenberg, M. Kittler
Phys. Stat. Sol. (a) 208, 588 (2011)

(5) Structures responsible for radiative and non-radiative recombination activity of dislocations in silicon
T. Mchedlidze, T. Arguirov, O. Kononchuk, M. Trushin, M. Reiche, M. Kittler
Phys. Stat. Sol. (c) 8, 991 (2011)

(6) Silicon based light emitter utilizing tunnel injection of excess carriers via MIS structure
T. Arguirov, C. Wenger, M. Lukosius, T. Mchedlidze, M. Reiche, M. Kittler
Phys. Stat. Sol. (c) 8, 1302 (2011)

(7) Characterization of crystalline silicon on glass using photoluminescence
T. Mchedlidze, J. Schneider, T. Arguirov, M. Kittler
Phys. Stat. Sol. (c) 8, 1334 (2011)

(8) Scanning probe studies of amorphous silicon subjected to laser annealing
M. Ratzke, T. Mchedlidze, T. Arguirov, N. Acharya, M. Kittler, J. Reif
Phys. Stat. Sol. (c) 8, 1351 (2011)

(9) Electrical characterization of silicon wafer bonding interfaces by means of voltage dependent light beam and electron beam induced current and capacitance of Schottky diodes
M. Trushin, O. Vyvenko, T. Mchedlidze, M. Reiche, M. Kittler
Phys. Stat. Sol. (c) 8, 1371 (2011)

(10) Room temperature direct band-gap emission from an unstrained Ge p-i-n LED on Si
M. Kittler, T. Arguirov, M. Oehme, N.V. Abrosimov, E. Kasper, J. Schulze
Solid State Phenomena 178-179, 25 (2011)

(11) Characterization of traps in crystalline silicon on glas using deep-level transient spectroscopy
T. Mchedlidze, J.H. Zollondz, M. Kittler
Solid State Phenomena 178-179, 100 (2011)

(12) Fast light-induced solid state crystallization of nanometer thick silicon layers on quartz
T. Mchedlidze, T. Arguirov, M. Kittler
Solid State Phenomena 178-179, 110 (2011)

(13) Analysis of electron-beam crystallized large grained Si films on glass substrate by EBIC, EBSD and PL
W. Seifert, D. Amkreutz, T. Arguirov, H-M. Krause, M. Schmidt
Solid State Phenomena 178-179, 116 (2011)

(14) Scanning x-ray excited optical luminescence microscopy as a new tool for the analysis of recombination active defects in multicrystalline silicon
M. Trushin, O.F. Vyvenko, W. Seifert, A. Klossek, I. Zizak, M. Kittler
Solid State Phenomena 178-179, 301 (2011)

(15) Anomalous temperature behaviour of band to band electroluminescence in silicon solar cells
A. Klossek, T. Arguirov, T. Mchedlidze, M. Kittler
Phys. Stat. Sol. (c) 8, 911 (2011)

(16) Modeling the early stages of oxygen agglomeration in silicon
G. Kissinger, J. Dabrowski, D. Kot, V.D. Akhmetov, A. Sattler, W. von Ammon
J. Electrochem. Soc. (c) 158, H343 (2011)

(17) Low threading dislocation density Ge deposited on Si (100) using RPCVD
Y. Yamamoto, P. Zaumseil, T. Arguirov, M. Kittler, B. Tillack
Solid State Electronics 60, 2 (2011)

(18) Preface
G. Kissinger, S. Pizzini, H. Tu, H Yamada-Kaneta
Phys. Stat. Sol. (c) 8 (3), A12 (2011)

(19) Research on efficiency limiting defects and defect engineering in silicon solar cells – results of the German research cluster SolarFocus
S. Riepe, I. Reis, W. Kwapil, M.A. Falkenberg, J. Schön, H. Behnken, J. Bauer, D. Kreßner-Kiel, W. Seifert, W. Koch
Phys. Stat. Sol. (c) 8, 733 (2011)

(20) Room temperature luminescence from Ge
T. Arguirov, M. Kittler, N.V. Abrosimov
Journ. of Physics: Conference Ser. 281, 012021 (2011)

(21) Photoluminescence study of Ge containing crystal defects
M. Kittler, T. Arguirov, M. Oehme, Y. Yamamoto, B. Tillack, N.V. Abrosimov
Phys. Stat. Sol. (a) 208, 754 (2011)

(22) Giant Poole-Frenkel effect for the shallow dislocation-related hole traps in silicon
M. Trushin, O. Vyvenko, V. Vdovin, M. Kittler
Journ. of Physics: Conference Ser. 281, 012009 (2011)

(23) Structure and properties of dislocations in interfaces of bonded wafers
M. Reiche, M. Kittler, R. Scholz, A. Hähnel, T. Arguirov
Journ. of Physics: Conference Ser. 281, 012017 (2011)

(24) Investigations of emitter homogeneity on laser doped emitters
S. Germershausen, L. Bartholomäus, U. Seidel, N. Hanisch, A. Schieferdecker, K.-H. Küsters, M. Kittler, M. Ametowobla, F. Einsele, G. Dallmann
Energy Procedia 8, 232 (2011)

(25) Structure and properties of dislocations in silicon: properties and uses
M. Reiche, M. Kittler
in "Crystalline Silicon – Properties and Uses" (Ed. Sukumar Basu), pp. 57-80, InTech, Rijeka, Croatia, 2011

Angenommene Artikel

(1) Analysis of the nucleation kinetics of oxide precipitates in Czochralski silicon
G. Kissinger, D. Kot, J. Dabrowski, V.D. Akhmetov, A. Sattler, W. von Ammon
Proc. 214th ECS Meeting, High Purity Silicon X, ext. Abstracts

(2) The effect of internal stresses on the recombination activity of structural defects in multicrystalline solar silicon
G. Sarau, S. Christiansen, M. Holla, W. Seifert
Proc. 37th IEEE PVSC, June 19-24, 2011, Seattle, USA

(3) PVD deposited high-purity SiC/Si layers for e-beam crystallized thin film solar cells on glass
A. Amkreutz, W. Seifert, S. Schönau, A. Schubert, S. Common
Proc. 26th EU PVSEC, Sept. 5-9, 2011, Hamburg, Germany

Eingeladene Vorträge

(1) Initial stages of oxygen and vacancy agglomeration: kinetic and getter effects
G. Kissinger, D. Kot, J. Dabrowski, W. Häckl, V.D. Akhmetov, A. Sattler
Kolloquium IKZ, January 28, 2011, Berlin, Germany

(2) Recombination activity of crystal defects in solar silicon
M. Kittler
German Polish Conference on Crystal Growth (GPCCG 2011), March 14-18, 2011, Frankfurt (Oder)/Slubice, Germany/Poland

(3) Synchrotron diagnostics for Si photovoltaics: analysis of metal precipitation
W. Seifert, T. Arguirov, O. Vyvenko, M. Trushin, W. Kwapil, M. Rinio, A. Zuschlag, M. Seibt, G. Martinez-Criado, M. Salome, R. Tucoulou, I. Zizak
Hercules Specialized Course "Neutrons and Synchrotron X-rays for industrial applications", May 2-4, 2011, Grenoble, France

(4) Recombination activity of crystal defects in solar silicon
M. Kittler
SolarWorld Innovations Lecture Series, May 26, 2011, Freiberg, Germany

(5) Dislocations in silicon: properties and an attempt to an explanation
M. Kittler
University of Zielona Góra, May 31, 2011, Zielona Góra, Poland

(6) Synchrotrondiagnostik von Metallausscheidungen in Solarsilizium
W. Seifert
SolarWorld Innovations Lecture Series, June 24, 2011, Freiberg, Germany

Vorträge

(1) Dislocation-related photoluminescence imaging of mc-Si wafers at room temperature
D. Mankovics, R. Schmid, T. Arguirov, M. Kittler
GPCCG 2011, March 14-18, 2011, Frankfurt (Oder)/Slubice, Germany/Poland

(2) Application of synchrotron microscopy and spectroscopy techniques for the analysis of transition metals precipitation in multicrystalline solar silicon
M. Trushin, O. Vyvenko, W. Seifert, M. Kittler
GPCCG 2011, March 14-18, 2011, Frankfurt (Oder)/Slubice, Germany/Poland

(3) Looking into solar cells with x-ray eyes
W. Kwapil, P. Gundel, M. Schubert, A. Zuschlag, W. Seifert, M. Rinio, G. Martinez-Criado, I. Zizak, J.A. Sans
ESRF User Meeting 2011, Workshop ‘X-rays and neutrons in energy-related materials science’, Febr. 7-9, 2011, Grenoble, France

(4) The effect of internal stresses on the recombination activity of structural defects in multicrystalline solar silicon
G. Sarau, S. Christiansen, M. Holla, W. Seifert
37th IEEE PVSC, June 19-24, 2011, Seattle, USA

(5) 300 mm Czochralski silicon wafers optimized with respect to voids with laterally homogeneous oxygen precipitation
G. Kissinger, G. Raming, R. Wahlich, T. Müller
26th International Conference on Defects in Semiconductors (ICDS-26), July 17-22, 2011, Nelson, New Zealand

(6) PVD deposited high-purity SiC/Si layers for e-beam crystallized thin film solar cells on glass
A. Amkreutz, W. Seifert, S. Schönau, M.A. Schubert, S. Common
26th EU PVSEC, Sept. 5-9, 2011, Hamburg, Germany

(7) Room temperature direct band-gap emission from an unstrained Ge p-i-n LED on Si
T. Arguirov, M. Kittler, M. Oehme, N.V. Abrosimov, E. Kasper, J. Schulze
GADEST 2011, Sept. 25-30, 2011, Loipersdorf, Austria

(8) Characterization of traps in crystalline silicon on glas using deep-level transient spectroscopy
T. Mchedlidze, J.H. Zollondz, M. Kittler
GADEST 2011, Sept. 25-30, 2011, Loipersdorf, Austria

(9) Fast light-induced solid state crystallization of nanometer thick silicon layers on quartz
T. Mchedlidze, T. Arguirov, M. Kittler
GADEST 2011, Sept. 25-30, 2011, Loipersdorf, Austria

(10) Analysis of electron-beam crystallized large grained Si films on glass substrate by EBIC, EBSD and PL
W. Seifert, D. Amkreutz, T. Arguirov, H-M. Krause, M. Schmidt
GADEST 2011, Sept. 25-30, 2011, Loipersdorf, Austria

(11) Scanning x-ray excited optical luminescence microscopy as a new tool for the analysis of recombination active defects in multicrystalline silicon
M. Trushin, O.F. Vyvenko, W. Seifert, A. Klossek, I. Zizak, M. Kittler
GADEST 2011, Sept. 25-30, 2011, Loipersdorf, Austria

(12) 300 mm Czochralski silicon wafers optimized with respect to voids with laterally homogeneous oxygen precipitation
G. Kissinger, G. Raming, R. Wahlich, T. Müller
14th Intern. Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP-14), Sept. 25-29, 2011, Miyazaki, Japan

(13) Impact of RTA on the Morphology of Oxygen Precipitates Investigated by FTIR Spectroscopy and TEM and on the Getter Efficiency for Cu and Ni in Silicon Wafers Investigated by Haze Tests
D. Kot, G. Kissinger, M.A. Schubert, T. Müller, A. Sattler
14th Intern. Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP-14), Sept. 25-29, 2011, Miyazaki, Japan

(14) Materialcharakterisierung von mc-Si am IHP
W. Seifert, V. Akhmetov, Ch. Krause, H-M. Krause, F. Weber
Projekttreffen AvantSolar, March 2, 2011, Berlin, Germany

(15) Installation for fast light-induced solid phase crystallization process
T. Mchedlidze and M. Kittler
Project meeting SINOVA, March 25, 2011, Jena (Germany)

(16) Fast photoluminescence imaging of mc-Si
D. Mankovics
UMG-Projekttreffen, March 31, 2011, Frankfurt (Oder), Germany

(17) Entwicklung der Charakterisierung für neuartiges multikristallines Silizium und Solarzellen (II)
W. Seifert
UMG-Projekttreffen, March 31, 2011, Frankfurt (Oder), Germany

(18) Methodische Arbeiten und Untersuchung von elektronenstrahlkristallisierten Si-Schichten auf Glas - Stand PVComB-Analytik
A. Klossek, W. Seifert, M. Krause, M. Kittler
Projekttreffen PVComB, Teilvorhaben Analytik, April 1, 2011, TU Berlin, Germany

(19) Joint Lab IHP/BTU Cottbus - Stand und Ziele PVcomB
M. Kittler, A.Klossek
Projekttreffen PVComB, Teilvorhaben Analytik, May 27, 2011, Potsdam, Germany

(20) Analysen von VGFM- und BGA-Ingots
W. Seifert, M. Kittler
Projekttreffen AvantSolar, June 9, 2011, Berlin, Germany

(21) Photoluminescence and Raman spectroscopy for PV material characterization
T. Mchedlidze
Seminar IKZ, June 9, Berlin, Germany

(22) Stand der FTIR-Diagnostik von O, C und N
W. Seifert, T. Arguirov, M. Kittler
Projekttreffen SolarWinS, Juli 5-7, 2011, Ochsenfurt, Germany

(23) Defektcharakterisierung in mc-Si: Vergleichende Untersuchungen mit PL-Mapping und Spektroskopie, PL-Imaging und Kathodolumineszenz
D. Mankovics, Ch. Krause, T. Arguirov
Projekttreffen SolarWinS, Juli 5-7, 2011, Ochsenfurt, Germany

(24) Investigations of emitter homogeneity on laser doped emitters
S. Germershausen, L. Bartholomäus, U. Seidel, N. Hanisch, A. Schieferdecker, K.-H. Küsters, M. Kittler, M. Ametowobla, F. Einsele, G. Dallmann
SiliconPV 2011, April 17-20, 2011, Freiburg, Germany

(25) Characterization of thin-film samples by photoluminescence and correlation between PL and EBIC
A. Klossek, Ch. Krause, T. Arguirov, W. Seifert, M. Kittler
48. Punktdefekttreffen, Oct. 13-14, Dresden, Germany

(26) Investigation of recombination of CSG thin films
T. Mchedlidze, M. Kittler
48. Punktdefekttreffen, Oct. 13-14, Dresden, Germany

(27) Crystallization of silicon nanolayers by light
T. Mchedlidze, T. Arguirov, M. Kittler
48. Punktdefekttreffen, Oct. 13-14, Dresden, Germany

(28) Unknown origin of very intense D3 like luminescence in solar silicon
Ch. Krause, D. Mankovics
48. Punktdefekttreffen, Oct. 13-14, Dresden, Germany

(29) Room-temperature direct band-gap emission from unstrained Ge p-i-n LED on Si
T. Arguirov, M. Kittler, M. Oehme, N.V. Abrosimov, E. Kasper, J. Schulze
48. Punktdefekttreffen, Oct. 13-14, Dresden, Germany

(30) Impact of RTA on the morphology of oxygen precipitates investogated by FTIR spectroscopy and TEM and on the getter efficiency for Cu and Ni in silicon wafers investigated by haze tests
D. Kot, G. Kissinger, M.A. Schubert, T. Müller, A. Sattler
48. Punktdefekttreffen, Oct. 13-14, Dresden, Germany

Patente

Proceedings, Monographien

(1) Advanced Silicon Materials Research for Electronic and Photovoltaic Applications II
S. Pizzini, G. Kissinger, H. Tu, H. Yamada-Kaneta (Eds.)
Proc. E-MRS Spring Meeting, Symposium I, Phys. Stat. Sol. A 208 (3), 2011

Berichte

(1) Project SINOVA
T. Mchedlidze, M. Kittler
Annual report 2010, March 15, 2011

(2) Si- und SiGe-Dünnfilme für thermoelektrische Anwendungen (Project SiGe-TE): Teilvorhaben 3
H.-M. Krause, M. Kittler
Semiannual reports, February and August 2011

(3) Project AvantSolar
W. Seifert, M. Kittler
Contribution to final report, July 2011