Publikationen 2010


Publizierte Artikel
Eingeladene Vorträge
Vorträge
Patente
Proceedings
Berichte
Weitere Publikationen:
2011, 2009, 2008
2007, 2006, 2005
2004, 2003, 2002
2001

Publizierte Artikel

(1) Optimization of the luminescence properties of silicon diodes produced by implantation and annealing
T. Arguirov, T. Mchedlidze, M. Reiche, M. Kittler
Solid State Phenomena 156-158, 579 (2010)

(2) Analysis of silicon carbide and silicon nitride precipitates in block cast multicrystalline silicon
M. Holla, T. Arguirov, W. Seifert, M. Kittler
Solid State Phenomena 156-158, 41 (2010)

(3) Defect characterization of poly-Ge and VGF-grown Ge material
M. Holla, T. Arguirov, G. Jia, M. Kittler, Ch. Frank-Rotsch, F. Kiessling, P. Rudolph
Solid State Phenomena 156-158, 483 (2010)

(4) Getter effects in low oxygen and high oxygen Czochralski silicon wafers
G. Kissinger, D. Kot, W. Häckl
ECS Transactions 33(11), 113 (2010)

(5) Modeling the early satges of oxygen agglomeration
G. Kissinger, J. Dabrowski, D. Kot, V.D. Akhmetov, A. Sattler, W. von Ammon
ECS Transactions 27(1), 1021 (2010)

(6) Rate equation modeling, ab initio calculation, and high sensitive FTIR investigations of the early stages of oxide precipitation in vacancy-rich CZ silicon
G. Kissinger, J. Dabrowski, V.D. Akhmetov, A. Sattler, D. Kot, W. von Ammon
Solid State Phenomena 156-158, 211 (2010)

(7) Characterization of thin film photovoltaic material using photoluminescence and Raman spectroscopy
T. Mchedlidze, T. Arguirov, S. Kouteva-Arguirova, M. Kittler
Solid State Phenomena 156-158, 419 (2010)

(8) Determination of the origin of dislocation related luminescence from silicon using regular dislocation networks
T. Mchedlidze, O. Kononchuk, T. Arguirov, M. Trushin, M. Reiche, M. Kittler
Solid State Phenomena 156-158, 567 (2010)

(9) Light-induced solid-phase crystallization of Si nanolayers in Si/SiO2 multiple quantum wells
T. Mchedlidze, T. Arguirov, S. Kouteva-Arguirova, M. Kittler
J. Appl. Phys. 107, 124302 (2010)

(10) Characterization of semiconductor films epitaxially grown on thin metal oxide buffer layers
P. Zaumseil, A. Giussani, O. Seifarth, T. Arguirov, A. Schubert, T. Schroeder
Solid State Phenomena 156-158, 467 (2010)

(11) Delineation of microdefects in silicon substrates by chromium-free preferential etching solutions and laser scattering tomography
M. Pellowska, D. Possner, D. Kot, G. Kissinger, B.O. Kolbesen
Solid State Phenomena 156-158, 443 (2010)

(12) Dislocation-based Si nanodevices
M. Reiche, M. Kittler, D. Buca, A. Hähnel, Qing-Tai Zhao, S. Mantl, U. Gösele
Japan. J. Appl. Phys. Pt.1 49, 04DJ02 (2010)

(13) Properties of interfacial dislocations in hydrophobic bonded Si wafers
M. Reiche, M. Kittler, A. Haehnel, T. Arguirov, T. Mchedlidze
ECS Transactions 33(4), 441 (2010)

(14) Electronic states of oxygen-free dislocation networks produced by direct bonding of silicon wafers
M. Trushin, O. Vyvenko, T. Mchedlidze, O. Kononchuk, M. Kittler
Solid State Phenomena 156-158, 283 (2010)

(15) XBIC/µ-XRF/µ-XAS analysis of metals precipitation in block-cast solar silicon
M. Trushin, W. Seifert, O. Vyvenko, J. Bauer, G. Martinez-Criado, M. Salome, M. Kittler
Nuclear Instruments and Methods in Physics Research B 268, 254 (2010)

(16) Scanning X-ray excited optical luminescence microscopy of multicrystalline silicon
O. Vyvenko, T. Arguirov, W. Seifert, I. Zizak, M. Trushin, M. Kittler
Phys. Stat. Sol. A 207, 1940 (2010)

(17) Feedback effect on the self-organized nanostructures formation on silicon upon femtosecond laser ablation
O. Varlamova, M. Ratzke, J. Reif
Solid State Phenomena 156-158, 535 (2010)

(18) Initial stages of oxygen and vacancy agglomeration: kinetic and getter effects
G. Kissinger, D. Kot, J. Dabrowski, W. Häckl, V.D. Akhmetov, A. Sattler
Proc. 6th Forum of the Science and Technology of Si Naterials, 36 (2010)


Eingeladene Vorträge

(1) Initial stages of oxygen and vacancy agglomeration: kinetic and getter effects
G. Kissinger, D. Kot, J. Dabrowski, W. Häckl, V.D. Akhmetov, A. Sattler
6th Forum of the Science and Technology of Si Naterials, Okayama, November 14-17, 2010, Japan

(2) Photoluminescence and EBIC for process control and failure analysis in Si-based photovoltaics
M. Kittler, T. Arguirov, T. Mchedlidze, R. Schmid, W. Seifert
36th Symposium for Testing and Failure Analysis - Alternative Energy, Dallas, November 14 - 18, 2010, USA

(3) Energieversorgung auf dem Chip
M. Kittler, Ch. Wenger
Innovationsworkshop "Energiespeicherung und deren zukünftige Applikationen", January 18-19, 2010, halle, Germany

(4) Versetzungen in Silizium: Elektrische und optische Eigenschaften sowie ihre Nutzung als aktive Komponeneten in neuartigen Bauelementen
M. Kittler
Kolloquium Leibniz-Institut für Oberflächenmodifizierung, April 8, 2010, Leipzig, Germany

(5) Short introduction to EBIC with special regard to the defect contrast in Si
M. Kittler
EBIC/FIB Workshop, Sept. 1, 2010, Halle, Germany


Vorträge

(1) Room temperature luminescence from Ge
T. Arguirov, M. Kittler, N.V. Abrosimov
Extended Defects in Semiconductors (EDS 2010), Brighton, Sept. 19 - 24, 2010, UK

(2) Room temperature direct band gap emission from Ge p-i-n heterojunction photodiodes
E. Kasper, M. Oehme, T. Arguirov, J. Werner, M. Kittler, J. Schulze
7th International Conference on Group IV Photonics, Beijing, September 01 - 03, 2010, China

(3) Getter effects in low oxygen and high oxygen Czochralski silicon wafers
G. Kissinger, D. Kot, W. Häckl
218th Electrochemical Society Meeting, High Purity Silicon XI, Las Vegas, October 10 - 15, 2010, USA

(4) Modeling the early stages of oxygen agglomeration
G. Kissinger, J. Dabrowski, D. Kot, V.D. Akhmetov, A. Sattler, W. von Ammon
CSTIC 2010, Shanghai, March 16 - 18, 2010, China

(5) Anomalous temperature behaviour of electroluminescence at solar cells
A. Klossek, T. Arguirov, T. Mchedlidze, M. Kittler
E-MRS Spring Meeting, Strasbourg, June 06 - 11, 2010, France

(6) Comparison of Cu getter efficiency for silicon wafers contaminated with low and high concentrations of Cu atoms
D. Kot, G. Kissinger, I. Costina, A. Sattler, T. Müller
218th Electrochemical Society Meeting, High Purity Silicon XI, Las Vegas, October 10 - 15, 2010, USA

(7) Characterization of crystalline silicon on glass using photoluminescence
T. Mchedlidze, J. Schneider, T. Arguirov, M. Kittler
10th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors (BIAMS 2010), Halle, July 04 - 09, 2010, Germany

(8) Fast solid phase crystallization of nanometer thick silicon layers by light
T. Mchedlidze, T. Arguirov, M. Ratzke, N. Acharya, M. Kittler
NANO 2010, Roma, September 12 - 17, 2010, Italy

(9) Structures responsible for radiative and non-radiative recombination activity of dislocations in silicon
T. Mchedlidze, T. Arguirov, O. Kononchuk, M. Trushin, M. Reiche, M. Kittler
E-MRS Spring Meeting, Strasbourg, June 07 - 11, 2010, France

(10) Scanning probe studies of amorphous silicon subjected to laser annealing
M. Ratzke, T. Mchedlidze, T. Arguirov, N. Acharya, M. Kittler, J. Reif
10th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors (BIAMS 2010), Halle, July 04 - 08, 2010

(11) Properties of interfacial dislocations in hydrophobic bonded Si wafers
M. Reiche, M. Kittler, A. Haehnel, T. Arguirov, T. Mchedlidze
ECS Fall Meeting, Las Vegas, October 10 - 15, 2010, USA

(12) Structure and properties of dislocations in interfaces of bonded Si wafers
M. Reiche, M. Kittler, R. Scholz, A. Haehnel, T. Arguirov
Extended Defects in Semiconductors (EDS 2010), Brighton, September 19 - 24, 2010, UK

(13) Photoluminescence and EBIC for process control and failure analysis in Si-based photovoltaics
M. Kittler, T. Arguirov, T. Mchedlidze, R. Schmid, W. Seifert
36th International Symposium for Testing and Failure Analysis - Alternative Energy, Dallas, November, 14 - 18, 2010, USA

(14) Research on efficiency-limiting defects and defect engineering in silicon solar cells - results of the German research cluster Solar Focus
S. Riepe, I. Reis, W. Kwapil, W. Koch, J. Schön, H. Behnken, J. Bauer, D. Kreßner-Kiel, W. Seifert, M. Seibt
E-MRS Spring Meeting, Strabourg, June 07 - 11, 2010, France

(15) Novel imaging techniques for dislocation-related D1-photo-luminescence of multicrystalline Si wafers – two different approaches
R. Schmid, D. Mankovics, T. Arguirov, T. Mchedlidze, M. Kittler
10th Internat. Workshop on Beam Injection Assessment of Microstructures in Semiconductors- BIAMS 2010, July 4 - 8, 2010, Halle (Saale), Germany

(16) Ultrafast transformation of silicon surfaces - direct observation of the refractive index change in surface second-harmonic pump-probe experiments
R.P. Schmid, A. Klossek, J. Reif
E-MRS Spring Meeting, Strasbourg, June 07 - 11, 2010, France

(17) Electrical characterization of silicon wafer bonding interfaces by means of voltage dependent light beam and electron beam induced current and capacitance of Schottky diodes
M. Trushin, O. Vyvenko, T. Mchedlidze, M. Reiche, M. Kittler
10th Internat. Workshop on Beam Injection Assessment of Microstructures in Semiconductors- BIAMS 2010, July 4 - 8, 2010, Halle (Saale), Germany

(18) Giant Poole-Frenkel effect for the shallow dislocation-related hole traps in silicon
M. Trushin, O. Vyvenko, V. Vdovin, M. Kittler
Extended Defects in Semiconductors (EDS 2010), Brighton, September 19 - 24, 2010, UK

(19) Low threading dislocation density Ge deposited on Si(100) using RPCVD
Y. Yamamoto, K. Köpke, P. Zaumseil, T. Arguirov, M. Kittler, B. Tillack
ISTDM 2010, International SiGe Technology and Device Meeting 2010, Stockholm, May 24 - 26, 2010, Sweden

(20) Silicon based light emitter utilizing tunnel injection of excess carriers via MIS structure
T. Arguirov, C. Wenger, M. Lukosius, T. Mchedlidze, M. Reiche, M. Kittler
10th Internat. Workshop on Beam Injection Assessment of Microstructures in Semiconductors- BIAMS 2010, July 4 - 8, 2010, Halle (Saale), Germany

(21) Photoluminescence study of Ge containing crystal defects
M. Kittler, T. Arguirov, M. Oehme
10th Internat. Workshop on Beam Injection Assessment of Microstructures in Semiconductors- BIAMS 2010, July 4 - 8, 2010, Halle (Saale), Germany

(22) Electronic states and luminescence of dislocation networks produced by direct bonding of silicon wafers
M. Trushin, O. Vyvenko, T. Mchedlidze and M. Kittler
47. Point Defect Meeting, Oct. 7-8, 2010, Dresden, Germany

(23) Diagnostik und Materialforschung an Solarsilizium
W. Seifert, M. Kittler
9. Solarmeeting, May 26, 2010, Potsdam, Germany

(24) Verunreinigungs- und Defektdiagnostik an multikristallinem Si-Blockmaterial
W. Seifert
Statusseminar AvantSolar, Sept. 9 - 10, 2010, Potsdam, Germany

(25) Synchrotron microscopy and spectroscopy for analysis of solar silicon
W. Seifert, O. Vyvenko, T. Arguirov, M. Trushin, M. Kittler
Workshop Photovoltaik, Sept. 24, 2010, BTU Cottbus, Cottbus, Germany

(26) 3rd generation photovoltaic cells based on Si/SiO2 multiple quantum wells with nanometer thick Si layers
T. Mchedlidze, T. Arguirov, M. Kittler
Workshop Photovoltaik, Sept. 24, 2010, BTU Cottbus, Cottbus, Germany

(27) Novel imaging techniques for dislocation-related D1-photo-luminescence of multicrystalline Si wafers – two different approaches
R. Schmid, D. Mankovics, T. Arguirov, T. Mchedlidze, M. Kittler
Workshop Photovoltaik, Sept. 24, 2010, BTU Cottbus, Cottbus, Germany

(28) Directional solidification of solar-grade silicon under traveling magnetic fields
F.M. Kiessling, N. Dropka, A. Lüdge, R. Fornari, Ch. Frank-Rotsch, U. Juda, P. Lange, M. Naumann, U. Rehse, F. Büllesfeld, M. Müller, V. Akhmetov, W. Seifert, M. Kittler, P. Rudolph
16. ICCG, Aug. 8-13, 2010, Beijing, China

(29) Directional solidification of solar-grade silicon under traveling magnetic fields
F.M. Kiessling, N. Dropka, A. Lüdge, R. Fornari, Ch. Frank-Rotsch, U. Juda, P. Lange, M. Naumann, U. Rehse, O. Root, F. Büllesfeld, T. Mono, M. Müller, V. Akhmetov, W. Seifert, M. Kittler, P. Rudolph
E-MRS Fall Meeting, Sept. 13-17, 2010, Warsaw, Poland


Patente

(1) Thermoelektrisches Halbleiterbauelement
M. Kittler, M. Reiche
IHP.334.09, PCT-Patentanmeldung am: 12.01.2010, AZ: PCT/EP2010/050302


Proceedings, Monographien

(1) Gettering and Defect Engineering in Semiconductor Technology XIII, (GADEST 2009), Proc. of the 13th International Autumn Meeting, Sept. 26 - Oct. 02, 2009, Döllnsee, Germany
M. Kittler, H. Richter (Eds)
Solid State Phenomena 156 - 158 (2010)


Berichte

(1) Charakterisierung der Wechselwirkung zwischen Defekten und ihres Einflusses auf die elektrischen Eigenschaften unter besonderer Berücksichtigung der Synchrotron-Mikroskopie
M. Kittler, J. Carstensen, W. Seifert
Final Report Project FKZ 0327650 A, July 2010